Silicon Diode Datasheet

Measured at 10 mhz and applied reverse voltage of 40v dc. 14 06 jul 17 1 document number.

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Eu directive 200295ec rohs.

Silicon diode datasheet. Inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. Silicon epitaxial planar diode electrically equivalent diodes. 1n4148 1n914.

You can download a free copy of this program from the adobe website. Silicon pin diode rev. For silicon diodes the built in potential is approximately 07 v 03 v for germanium and 02 v for schottky.

Sot23 npn silicon planar high voltage high performance transistor complementary part number fmmt597 device marking 497 absolute maximum ratings parameter symbol value unit collector base voltage vcbo 300 v collector emitter voltage vceo 300 v emitter base voltage vebo 5v continuous collector current ic 500 ma peak pulse current icm 1a base. Axial lead solderable per mil std 202 method 208 guaranteed. In order to read some of these files you must have adobe reader installed on your computer.

The diode is commonly said to have a. In the practical example of a diode a piece of silicon is doped with two different dopants such as boron on one side and arsenic on the other. 12 features and benefits high voltage current controlled rf resistor for rf attenuators and switches low diode capacitance low diode forward resistance low series inductance.

Ul94v o rate flame retardant lead. All applicable rohs exemptions applied see eu directive 200295ec annex notes. Sot23 silicon epitaxial schottky barrier diodes.

For a silicon diode the boron doped side is called p type silicon. 9 11 march 2019 product data sheet 1 product profile 11 general description planar pin diode in a sod323 very small plastic smd package. Silicon pin diode pin diode for high speed switching of rf signals low forward resistance small capacitance small inductance bxy42 hirel silicon pin diode hirel discrete and microwave semiconductor pin diode for high speed switching of rf signals.

Do 41 molded plastic epoxy. Leads maintained at ambient temperature at a distance of 95mm from the case. Bat54s silicon epitaxial schottky barrier diode datasheet author.

The point where the boron doped side meets the arsenic doped side is called a p n junction. 1n4001 silicon rectifier diodes high current capability high surge current capability high reliability low reverse current low forward voltage drop. Bat54s silicon epitaxial schottky barrier diode datasheet keywords power supplies mobile telecomms scsilow forward voltage high current capability.

Thus if an external voltage greater than and opposite to the built in voltage is applied a current will flow and the diode is said to be turned on as it has been given an external forward bias.

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